Electric field control of the photoinduced resistance increase in La0.7Sr0.3MnO3/LaTiO3/SrTiO3 heterostructure

被引：9

作者：

Ghising, Pramod ^{[1
]}

Hossain, Z. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India

来源：

PHYSICAL REVIEW B | 2019年 / 100卷 / 11期

关键词：

THIN-FILMS; SUPERCONDUCTIVITY; PHOTOCONDUCTIVITY; RESISTIVITY; MANGANITES; MODULATION; STATE;

D O I：

10.1103/PhysRevB.100.115119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we study the effect of light and electric field on the electrical properties of a La0.7Sr0.3MnO3 film at 300 K Taking advantage of its charge, spin, orbital, and lattice degrees of freedom, we successfully show that light and electric field together can be used to tune the resistance states of the manganite system. Using applied gate voltage V-g and light, we are able to obtain a change in resistance of about +/- 7.5%. Furthermore, incorporating an ultrathin interfacial LaTiO3 layer provides valuable insight into the origin of the photoinduced effect. The observed photoinduced effect is attributed to photoexcited down-spin e(g down arrow) electrons, interfacial charge injection, and manipulation of orbital occupancy depending on the gate voltage and wavelength of light.

引用

页数：7

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