Width dependent disorder and many-body effects in gallium arsenide quantum wells

被引：0
|
作者：
Perez, Cesar [1 ]
Reno, John L. [2 ]
Cundiff, Steve [1 ]
机构：
[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[2] Sandia Natl Labs, Dept 1123,MS 0601, Albuquerque, NM 87185 USA
来源：
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study many body effects and disorder in both narrow and wide quantum wells with two-dimensional coherent spectroscopy. The inhomogeneous linewidth, homogeneous linewidth, and exictation induced dephasing depend on width in AlGaAs/GaAs quantum wells. (C) 2020 The Author(s)
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页数：2
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