High-Speed Heterogeneous Quantum Dot Avalanche Photodiodes with Polarization Dependent Gain

被引：1

作者：

Tossoun, Bassem ^{[1
]}

Srinivasan, Sudharsanan ^{[1
]}

Descos, Antoine ^{[1
]}

Kurczveil, Geza ^{[1
]}

Liang, Di ^{[1
]}

Beausoleil, Raymond ^{[1
]}

机构：

[1] Hewlett Packard Enterprise, Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304 USA

来源：

2020 IEEE PHOTONICS CONFERENCE (IPC) | 2020年

关键词：

quantum dots; avalanche photodiodes (APDs); silicon photonics;

D O I：

10.1109/ipc47351.2020.9252355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with a record-high gain-bandwidth product (GBP) of 300 GHz and open eye diagrams up to 15 Gb/s. The polarization dependence of gain, responsivity, and bandwidth has been investigated for the first time.

引用

页数：2

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