Lead-free relaxor ferroelectric ceramics with high optical transparency and energy storage ability

被引:312
作者
Qu, Bingyue [1 ]
Du, Hongliang [2 ]
Yang, Zetian [2 ]
机构
[1] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China
[2] Air Force Engn Univ, Coll Sci, Xian 710051, Peoples R China
基金
中国博士后科学基金; 美国国家科学基金会;
关键词
THIN-FILM TRANSISTORS; POTASSIUM-SODIUM NIOBATE; MICROWAVE-ABSORPTION; FABRICATION; PERMITTIVITY; DENSITY;
D O I
10.1039/c5tc04005a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We prepared highly transparent relaxor ferroelectric ceramics based on (K0.5Na0.5)NbO3 using a pressure-less solid-state sintering method without using hot isostatic pressing and spark plasma sintering. A high energy storage density of 2.48 J cm(-3) and high transparency in the visible region (ca. 60% at 0.7 mu m) were achieved for the 0.8(K0.5Na0.5)NbO3-0.2Sr(Sc0.5Nb0.5)O-3 ceramics with submicron-sized grains (about 0.5 mu m). The energy storage density of 2.48 J cm(-3) exceeded all previous reports for lead-free bulk ceramics. These results demonstrate that the 0.8(K0.5Na0.5)NbO3-0.2Sr(Sc0.5Nb0.5)O-3 ceramics are promising lead-free transparent dielectric materials for use in transparent electronic devices. This study not only opens up a new avenue for the design of lead-free transparent ferroelectric ceramics with a high energy storage density, but also expands the applications of (K0.5Na0.5)NbO3-based ceramics into new areas beyond piezoelectric applications.
引用
收藏
页码:1795 / 1803
页数:9
相关论文
共 46 条
[1]   Transparent and flexible carbon nanotube transistors [J].
Artukovic, E ;
Kaempgen, M ;
Hecht, DS ;
Roth, S ;
GrUner, G .
NANO LETTERS, 2005, 5 (04) :757-760
[2]   Ultrathin graphene: electrical properties and highly efficient electromagnetic interference shielding [J].
Cao, Mao-Sheng ;
Wang, Xi-Xi ;
Cao, Wen-Qiang ;
Yuan, Jie .
JOURNAL OF MATERIALS CHEMISTRY C, 2015, 3 (26) :6589-6599
[3]   Highly bendable, transparent thin-film transistors that use carbon-nanotube-based conductors and semiconductors with elastomeric dielectrics [J].
Cao, Q ;
Hur, SH ;
Zhu, ZT ;
Sun, YG ;
Wang, CJ ;
Meitl, MA ;
Shim, M ;
Rogers, JA .
ADVANCED MATERIALS, 2006, 18 (03) :304-+
[4]   A dielectric polymer with high electric energy density and fast discharge speed [J].
Chu, Baojin ;
Zhou, Xin ;
Ren, Kailiang ;
Neese, Bret ;
Lin, Minren ;
Wang, Qing ;
Bauer, F. ;
Zhang, Q. M. .
SCIENCE, 2006, 313 (5785) :334-336
[5]   Flexible Nanodielectric Materials with High Permittivity for Power Energy Storage [J].
Dang, Zhi-Min ;
Yuan, Jin-Kai ;
Yao, Sheng-Hong ;
Liao, Rui-Jin .
ADVANCED MATERIALS, 2013, 25 (44) :6334-6365
[6]   Enhanced energy-storage properties of 0.89Bi0.5Na0.5TiO3-0.06BaTiO3-0.05K0.5Na0.5NbO3 lead-free anti-ferroelectric ceramics by two-step sintering method [J].
Ding, Jianxiang ;
Liu, Yunfei ;
Lu, Yinong ;
Qian, Hao ;
Gao, Hong ;
Chen, Hu ;
Ma, Chengjian .
MATERIALS LETTERS, 2014, 114 :107-110
[7]   High Tm lead-free relaxor ferroelectrics with broad temperature usage range:: 0.04BiScO3-0.96(K0.5Na0.5)NbO3 [J].
Du, Hongliang ;
Zhou, Wancheng ;
Luo, Fa ;
Zhu, Dongmei ;
Qu, Shaobo ;
Li, Ye ;
Pei, Zhibin .
JOURNAL OF APPLIED PHYSICS, 2008, 104 (04)
[8]   Towards see-through displays:: Fully transparent thin-film transistors driving transparent organic light-emitting diodes [J].
Görrn, P ;
Sander, M ;
Meyer, J ;
Kröger, M ;
Becker, E ;
Johannes, HH ;
Kowalsky, W ;
Riedl, T .
ADVANCED MATERIALS, 2006, 18 (06) :738-+
[9]   A review on the dielectric materials for high energy-storage application [J].
Hao, Xihong .
JOURNAL OF ADVANCED DIELECTRICS, 2013, 3 (01)
[10]   Fabrication of fully transparent nanowire transistors for transparent and flexible electronics [J].
Ju, Sanghyun ;
Facchetti, Antonio ;
Xuan, Yi ;
Liu, Jun ;
Ishikawa, Fumiaki ;
Ye, Peide ;
Zhou, Chongwu ;
Marks, Tobin J. ;
Janes, David B. .
NATURE NANOTECHNOLOGY, 2007, 2 (06) :378-384