Electrochemically superfilling of n-type ZnO nanorod arrays with p-type CuSCN semiconductor

被引：20
|
作者：
Wu, Weibing [1 ]
Cui, Shougang [1 ]
Yang, Changhong [1 ]
Hu, Guangda [1 ]
Wu, Haitao [1 ]
机构：
[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Shandong, Peoples R China
来源：
ELECTROCHEMISTRY COMMUNICATIONS | 2009年 / 11卷 / 09期
关键词：
Electrochemical deposition; Superfilling; Heterojunction; ZnO nanoarray; CuSCN; FILMS;
D O I：
10.1016/j.elecom.2009.07.001
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The primary problem for constructing three-dimensional (3D) heterojunctions lies in poor pore filling and interface contact quality. An electrochemical superfilling technique is developed to construct well-organized heterojunctions based on a bottom-up filling mechanism. Morphology observation shows that ZnO nanorod arrays are completely filled with CuSCN and intimate interface contact is formed between ZnO and CuSCN. Electrical test confirms that as-fabricated 3D heterojunction has high diode current density and high rectification ratio of 154. This superfilling technique has promising applications in other 3D heterojunctions. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1736 / 1739
页数：4
相关论文
共 50 条
  • [31] Investigation of novel heterojunction: P-type SnS coated n-type ZnO nanowire
    Bu, Ian Y. Y.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 88 : 704 - 710
  • [32] Hot-point probe measurements of N-type and P-type ZnO films
    Au, Benedict Wen-Cheun
    Chan, Kah-Yoong
    Sin, Yew-Keong
    Ng, Zi-Neng
    MICROELECTRONICS INTERNATIONAL, 2017, 34 (01) : 30 - 34
  • [33] Fabrication and characterization of p-type SiNW/n-type ZnO heterostructure for optoelectronics application
    Hazra, Purnima
    Chakrabarti, P.
    Jit, S.
    INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND TECHNOLOGY (ICMST 2012), 2015, 73
  • [34] Spray Pyrolysis of ZnO:In: Characterization of Growth Mechanism and Interface Analysis on p-Type GaAs and n-Type Si Semiconductor Materials
    Heitmann, Ulrike
    Westraadt, Johan
    O'Connell, Jacques
    Jakob, Leonie
    Dimroth, Frank
    Bartsch, Jonas
    Janz, Stefan
    Neethling, Jan
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (36) : 41149 - 41155
  • [35] DIFFERENT P(IN) ANTISITES IN N-TYPE AND P-TYPE INP
    SUN, HJ
    GISLASON, HP
    RONG, CF
    WATKINS, GD
    PHYSICAL REVIEW B, 1993, 48 (23): : 17092 - 17105
  • [36] PdIn contacts to n-type and p-type GaP
    Lin, CF
    Ingerly, DB
    Chang, YA
    APPLIED PHYSICS LETTERS, 1996, 69 (23) : 3543 - 3545
  • [37] THERMOMAGNETIC PROPERTIES OF N-TYPE AND P-TYPE HGTE
    JEDRZEJCZAK, A
    DIETL, T
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 76 (02): : 737 - 751
  • [38] PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE SILICON IN ACETONITRILE
    BYKER, HJ
    WOOD, VE
    AUSTIN, AE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 1982 - 1987
  • [39] PARAMAGNETIC RESONANCE IN N-TYPE AND P-TYPE SILICON
    WILLENBROCK, FK
    BLOEMBERGEN, N
    PHYSICAL REVIEW, 1953, 91 (05): : 1281 - 1281
  • [40] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM
    BROWN, WL
    PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527
12345