Electrochemically superfilling of n-type ZnO nanorod arrays with p-type CuSCN semiconductor

被引：20
|
作者：
Wu, Weibing [1 ]
Cui, Shougang [1 ]
Yang, Changhong [1 ]
Hu, Guangda [1 ]
Wu, Haitao [1 ]
机构：
[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Shandong, Peoples R China
来源：
ELECTROCHEMISTRY COMMUNICATIONS | 2009年 / 11卷 / 09期
关键词：
Electrochemical deposition; Superfilling; Heterojunction; ZnO nanoarray; CuSCN; FILMS;
D O I：
10.1016/j.elecom.2009.07.001
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The primary problem for constructing three-dimensional (3D) heterojunctions lies in poor pore filling and interface contact quality. An electrochemical superfilling technique is developed to construct well-organized heterojunctions based on a bottom-up filling mechanism. Morphology observation shows that ZnO nanorod arrays are completely filled with CuSCN and intimate interface contact is formed between ZnO and CuSCN. Electrical test confirms that as-fabricated 3D heterojunction has high diode current density and high rectification ratio of 154. This superfilling technique has promising applications in other 3D heterojunctions. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1736 / 1739
页数：4
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