Photoconductance in magnetic tunnel junctions

被引：3
作者：
Koller, PHP
Vanhelmont, FWM
Coehoorn, R
de Jonge, WJM
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2002年 / 38卷 / 05期
关键词：
magnetoresistance; magnetoresistive devices; photoconducting materials; photoconductivity; tunneling;
D O I：
10.1109/TMAG.2002.803171
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The photoconductance of magnetic tunnel junctions has been studied in order to obtain directly determined values of the tunnel barrier height. Experiments for different types of junctions show that the presence of an aluminum layer close to the oxide barrier is crucial for the observation of a large photocurrent. For Ni80Fe20-based magnetic tunnel junctions, the effective barrier height increases with increasing magnetic layer thickness between the aluminum source layer and the aluminum oxide barrier. This trend is also visible in the barrier height determined from a Simmons fit to the current-voltage characteristics.
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收藏
页码：2712 / 2714
页数：3
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