Digital single event transient trends with technology node scaling

被引：108

作者：

Benedetto, J. M. ^{[1
]}

Eaton, P. H.

Mavis, D. G.

Gadlage, M.

Turflinger, T.

机构：

[1] Micro RDC, Albuquerque, NM 87110 USA

[2] NAVSEA Crane, Crane, IN 47522 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期

关键词：

error rate; heavy ion; radiation effects; single event effects; single event transient; single event upset; transient propagation; transient pulse width;

D O I：

10.1109/TNS.2006.886044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured the single-event-transient (SET) width as a function of cross-section over three CMOS bulk/epitaxial technology nodes (0.25, 0.18 and 0.13 mu m) using an identically scaled programmable-delay temporal-latch technique. Both the maximum width of the SET pulse and the cross-section are shown to depend primarily on the supply voltage, with a substantial increase in transient width and cross-section with lower operating potentials.

引用

收藏

页码：3462 / 3465

页数：4

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