Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD)

被引：0

作者：

Hatanaka, Teruyoshi ^{[1
]}

Yajima, Ryoji ^{[1
]}

Horiuchi, Takeshi ^{[2
]}

Wang, Shouyu ^{[2
]}

Zhang, Xizhen ^{[2
]}

Takahashi, Mitsue ^{[2
]}

Sakai, Shigeki ^{[2
]}

Takeuchi, Ken ^{[1
]}

机构：

[1] Univ Tokyo, Informat Elect & Syst Engn Dept, Tokyo 1138654, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

2009 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2009年

关键词：

SSD; NAND; Flash memory;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ferroelectric(Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a random write is removed by introducing a batch write algorithm. As a result, the SSD performance can double. The NV-page buffer realizes a power outage immune highly reliable operation. With a low program/erase voltage, 6V and a high endurance, 100Million cycles, the proposed Fe-NAND is most suitable for a highly reliable high-speed low power data center application enterprise SSD.

引用

页码：78 / 79

页数：2

共 6 条

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[2] [Anonymous], USENIX TECHN C
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