Seed layer-free electrodeposition and characterization of vertically aligned ZnO nanorod array film
被引:40
作者:
Xu, Feng
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Nanjing Univ Technol, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R ChinaNanjing Univ Technol, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R China
Xu, Feng
[1
]
Lu, Yinong
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Nanjing Univ Technol, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R ChinaNanjing Univ Technol, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R China
Lu, Yinong
[1
]
Xie, Yan
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Nanjing Univ Technol, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R ChinaNanjing Univ Technol, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R China
Xie, Yan
[1
]
Liu, Yunfei
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Nanjing Univ Technol, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R ChinaNanjing Univ Technol, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R China
Liu, Yunfei
[1
]
机构:
[1] Nanjing Univ Technol, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R China
Vertically aligned arrays of ZnO nanorod (ZNR) were rapidly synthesized on ITO glass without needing a pre-prepared seed layer of ZnO via a hexamethylenetetramine (HMT)-assisted electrodeposition route. The effect of HMT on the ZNR electrodeposition process was investigated by the cyclic voltammetric curve and the current-time curve. An electrodeposition growth model based on the capping effect of HMT-4H was proposed. The as-synthesized ZNRs possess single crystalline, a wurtzite crystal structure with markedly preferential growth orientation along [0001] direction determined by transmission electron microscopy and powder X-ray diffraction. As compared with the electrodeposited ZnO film without HMT assistance, the ZNR arrays showed the high transmittance (90%) in the visible wavelength range and the blue-shift of the band gap energy. Moreover, the presence of an optical-phonon E-2 (high) at 437.3 cm(-1) in Raman spectrum and strong ultraviolet emission at 376 nm but weak defect-related deep level emission in the room temperature photoluminescence spectrum also indicated that such ZNR arrays are of good crystal quality. More importantly, the rapid synthesis of ZNRs could provide the feasibility for preparation of ZnO nanotubes within a shorter time by a subsequent electrochemical dissolution process.
机构:
Guru Nanak Dev Univ, Dept Appl Phys, Amritsar 143001, Punjab, IndiaGuru Nanak Dev Univ, Dept Appl Phys, Amritsar 143001, Punjab, India
Chander, Ravi
;
Raychaudhuri, A. K.
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SN Bose Natl Ctr Basic Sci, Kolkata, India
Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, IndiaGuru Nanak Dev Univ, Dept Appl Phys, Amritsar 143001, Punjab, India
机构:
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Gao, XD
;
Li, XM
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Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Li, XM
;
Yu, WD
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Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
机构:
Guru Nanak Dev Univ, Dept Appl Phys, Amritsar 143001, Punjab, IndiaGuru Nanak Dev Univ, Dept Appl Phys, Amritsar 143001, Punjab, India
Chander, Ravi
;
Raychaudhuri, A. K.
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机构:
SN Bose Natl Ctr Basic Sci, Kolkata, India
Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, IndiaGuru Nanak Dev Univ, Dept Appl Phys, Amritsar 143001, Punjab, India
机构:
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Gao, XD
;
Li, XM
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Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Li, XM
;
Yu, WD
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Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China