Improvement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere

被引：22

作者：

Kubovic, Michal ^{[1
]}

Kasu, Makoto ^{[1
]}

机构：

[1] NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 08期

关键词：

SURFACE CONDUCTIVE LAYER; FILMS; MECHANISM; RESISTANCE;

D O I：

10.1143/APEX.2.086502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of field effect transistors (FETs) fabricated on hydrogen-terminated diamond have been greatly improved by exposing the diamond surface to nitrogen dioxide. Exposure to NO2 gas significantly increased the hole sheet charge density up to 1.3 x 10(14) cm(-2), which is several times higher than previously reported values. FETs exposed to NO2 gas exhibited lower source and drain resistances, which facilitated a 1.8 fold increase in maximum drain current, transconductance increased 1.5 times and power gain cut-off frequency increased 1.6 times. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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