Power Cycling Capability Comparison of Si and SiC MOSFETs under Different Conduction Modes

被引：0

作者：

Chen, Jie ^{[1
]}

Deng, Erping ^{[1
,2
]}

Zhao, Zixuan ^{[1
]}

Wu, Yuxuan ^{[1
]}

Huang, Yongzhang ^{[1
]}

机构：

[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China

[2] Tech Univ Chemnitz, Chair Power Elect & EMC, D-09126 Chemnitz, Germany

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

基金：

中国国家自然科学基金;

关键词：

power cycling capability; Si MOSFETs; SiC MOSFETs; conduction modes; failure mechanism; RELIABILITY;

D O I：

10.1109/ispsd46842.2020.9170163

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Different from the single conduction mode of IGBT and diode, the MOSFET has three conduction modes and corresponding to three different power cycling test (PCT) methods respectivelyo cent In order to fully understand the difference between these conduction modes, the Si and SiC MOSFETs are selected due to their different body diode characteristics to compare the power cycling capability under the same thermal stress but in different modes. The experimental results show that PCT in different conduction modes have an impact on the failure mechanism and lifetime, and the corresponding PCT method must be selected according to the actual working conditions of MOSFETs.

引用

页码：541 / 544

页数：4

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