Temperature Dependence of the Piezotronic and Piezophototronic Effects in a-axis GaN Nanobelts

被引:61
作者
Wang, Xingfu [1 ,2 ]
Yu, Ruomeng [1 ]
Peng, Wenbo [1 ]
Wu, Wenzhuo [1 ]
Li, Shuti [2 ]
Wang, Zhong Lin [1 ,3 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] S China Normal Univ, Guangdong Engn Res Ctr Optoelect Funct Mat & Devi, Guangzhou 510631, Guangdong, Peoples R China
[3] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China
关键词
ULTRAVIOLET-LIGHT; NANOWIRE; LOGIC; PHOTODETECTOR; DEVICES; NANODEVICES; ULTRAFAST; SENSORS;
D O I
10.1002/adma.201504534
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The temperature dependence of the piezotronic and piezophototronic effects in a-axis GaN nanobelts from 77 to 300 K is investigated. The piezotronic effect is enhanced by over 440% under lower temperatures. Two independent processes are discovered to form a competing mechanism through the investigation of the temperature dependence of the piezophototronic effect in a-axis GaN nanobelts.
引用
收藏
页码:8067 / 8074
页数:8
相关论文
共 42 条
[11]   Self-Powered UV Photosensor Based on PEDOT:PSS/ZnO Micro/Nanowire with Strain-Modulated Photoresponse [J].
Lin, Pei ;
Yan, Xiaoqin ;
Zhang, Zheng ;
Shen, Yanwei ;
Zhao, Yanguang ;
Bai, Zhiming ;
Zhang, Yue .
ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (09) :3671-3676
[12]   Quantitative fitting of nonlinear current-voltage curves and parameter retrieval of semiconducting nanowire, nanotube and nanoribbon devices [J].
Liu, Y. ;
Zhang, Z. Y. ;
Hu, Y. F. ;
Jin, C. H. ;
Peng, L. -M. .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (01) :252-258
[13]   ELECTRON-TRANSPORT MECHANISM IN GALLIUM NITRIDE [J].
MOLNAR, RJ ;
LEI, T ;
MOUSTAKAS, TD .
APPLIED PHYSICS LETTERS, 1993, 62 (01) :72-74
[14]   Identification of Si and O donors in hydride-vapor-phase epitaxial GaN [J].
Moore, WJ ;
Freitas, JA ;
Braga, GCB ;
Molnar, RJ ;
Lee, SK ;
Lee, KY ;
Song, IJ .
APPLIED PHYSICS LETTERS, 2001, 79 (16) :2570-2572
[15]   Enhanced Cu2S/CdS Coaxial Nanowire Solar Cells by Piezo-Phototronic Effect [J].
Pan, Caofeng ;
Niu, Simiao ;
Ding, Yong ;
Dong, Lin ;
Yu, Ruomeng ;
Liu, Ying ;
Zhu, Guang ;
Wang, Zhong Lin .
NANO LETTERS, 2012, 12 (06) :3302-3307
[16]   Solution-Derived ZnO Homojunction Nanowire Films on Wearable Substrates for Energy Conversion and Self-Powered Gesture Recognition [J].
Pradel, Ken C. ;
Wu, Wenzhuo ;
Ding, Yong ;
Wang, Zhong Lin .
NANO LETTERS, 2014, 14 (12) :6897-6905
[17]   Nature of room-temperature photoluminescence in ZnO [J].
Shan, W ;
Walukiewicz, W ;
Ager, JW ;
Yu, KM ;
Yuan, HB ;
Xin, HP ;
Cantwell, G ;
Song, JJ .
APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3
[18]   Some effects of oxygen impurities on AlN and GaN [J].
Slack, GA ;
Schowalter, LJ ;
Morelli, D ;
Freitas, JA .
JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) :287-298
[19]   Determination of Mass Density, Dielectric, Elastic, and Piezoelectric Constants of Bulk GaN Crystal [J].
Soluch, Waldemar ;
Brzozowski, Ernest ;
Lysakowska, Magdalena ;
Sadura, Jolanta .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2011, 58 (11) :2469-2474
[20]  
SZE SM, 1982, CC/ENG TECH APPL SCI, P28