Temperature Dependence of the Piezotronic and Piezophototronic Effects in a-axis GaN Nanobelts

被引：61

作者：

Wang, Xingfu ^{[1
,2
]}

Yu, Ruomeng ^{[1
]}

Peng, Wenbo ^{[1
]}

Wu, Wenzhuo ^{[1
]}

Li, Shuti ^{[2
]}

Wang, Zhong Lin ^{[1
,3
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] S China Normal Univ, Guangdong Engn Res Ctr Optoelect Funct Mat & Devi, Guangzhou 510631, Guangdong, Peoples R China

[3] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 48期

关键词：

ULTRAVIOLET-LIGHT; NANOWIRE; LOGIC; PHOTODETECTOR; DEVICES; NANODEVICES; ULTRAFAST; SENSORS;

D O I：

10.1002/adma.201504534

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The temperature dependence of the piezotronic and piezophototronic effects in a-axis GaN nanobelts from 77 to 300 K is investigated. The piezotronic effect is enhanced by over 440% under lower temperatures. Two independent processes are discovered to form a competing mechanism through the investigation of the temperature dependence of the piezophototronic effect in a-axis GaN nanobelts.

引用

页码：8067 / 8074

页数：8

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