Luminescence and scintillation properties of liquid phase epitaxy grown Y2SiO5: Ce single crystalline films

被引：3

作者：

Wantong, Kriangkrai ^{[1
]}

Yawai, Nattasuda ^{[1
]}

Chewpraditkul, Weerapong ^{[1
]}

Kucera, Miroslav ^{[2
]}

Hanus, Martin ^{[2
]}

Nikl, Martin ^{[3
]}

机构：

[1] King Mongkuts Univ Technol Thonburi, Bangkok 10140, Thailand

[2] Charles Univ Prague, Fac Math & Phys, Ke Karlovu 5, Prague 12116 2, Czech Republic

[3] AS CR, Inst Phys, Cukrovarnicka 10, Prague 16253 6, Czech Republic

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 468卷

关键词：

Luminescence; Liquid phase epitaxy; Ce doping; Y2SiO5:Ce; Scintillator materials; YAG;

D O I：

10.1016/j.jcrysgro.2016.12.094

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Luminescence and scintillation properties of Y2SiO5: Ce single crystalline film (YSO:Ce-LPE) grown by the liquid phase epitaxy technique are investigated and compared to the bulk Czochralski-grown YSO:Ce single crystal (YSO:Ce-SC). The light yield (LY) and energy resolution are measured using an R6231 photomultiplier under excitation with alpha-and gamma-rays. At 662 keV gamma-rays, the LY value of 12,410 ph/MeV obtained for YSO: Ce -LPE is lower than that of 20,150 ph/MeV for YSO: Ce -SC whereas the comparable LY value and energy resolution are obtained under excitation with 5.5 MeV alpha- rays. The ratio of LY under excitation with alpha- and gamma- rays (alpha/gamma ratio) is determined. Dependence of LY on an amplifier shaping time (0.5-12 mu s) is also measured.

引用

页码：275 / 277

页数：3

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