Optical properties of Al-doped ZnO thin films deposited by two different sputtering methods

被引：33

作者：

Yim, Keunbin ^{[1
]}

Lee, Chongmu ^{[1
]}

机构：

[1] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2006年 / 41卷 / 12期

关键词：

Al-doped ZnO (AZO); RF magnetron sputtering; RF power; transparent conducting oxide (TCO); transmittance;

D O I：

10.1002/crat.200610749

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O-2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Also effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

引用

页码：1198 / 1202

页数：5

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