Donor-related recombination processes in hydride-vapor-phase epitaxial GaN

被引：82

作者：

Freitas, JA ^{[1
]}

Moore, WJ

Shanabrook, BV

Braga, GCB

Lee, SK

Park, SS

Han, JY

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] SFA Inc, Largo, MD 20774 USA

[3] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.66.233311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution, variable-temperature photoluminescence studies of recombination processes associated with excitons bound to donors in hydride-vapor-phase epitaxial GaN are presented. Detailed analyses of the two-electron satellite (2ES) region identify transitions associated with ground and excited states of both the donor-bound exciton complexes and of the donor itself. All of the 2ES transitions observed in this work can be accounted for by the recombination of excitons bound to Si and O substitutional impurities and the line positions are in excellent agreement with the energies of donor intraimpurity transitions measured previously by infrared absorption. Conflicting aspects of donor identification and the binding energies of impurities and excitons are clarified.

引用

页码：1 / 4

页数：4

共 50 条

[31] Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method [J].

Liu, Jianming ;

Liu, Xianlin ;

Li, Chengming ;

Wei, Hongyuan ;

Guo, Yan ;

Jiao, Chunmei ;

Li, Zhiwei ;

Xu, Xiaoqing ;

Song, Huaping ;

Yang, Shaoyan ;

Zhu, Qinsen ;

Wang, Zhanguo ;

Yang, Anli ;

Yang, Tieying ;

Wang, Huanhua .

NANOSCALE RESEARCH LETTERS, 2011, 6 :X1-8

[32] Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method [J].

Jianming Liu ;

Xianlin Liu ;

Chengming Li ;

Hongyuan Wei ;

Yan Guo ;

Chunmei Jiao ;

Zhiwei Li ;

Xiaoqing Xu ;

Huaping Song ;

Shaoyan Yang ;

Qinsen Zhu ;

Zhanguo Wang ;

Anli Yang ;

Tieying Yang ;

Huanhua Wang .

Nanoscale Research Letters, 6

[33] Fundamentals of vapor phase epitaxial growth processes [J].

Stringfellow, G. B. .

PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS, 2007, 916 :48-68

[34] Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy [J].

Wang, Xinzhong ;

Yu, Guanghui ;

Lin, Chaotong ;

Cao, Mingxia ;

Gong, Hang ;

Qi, Ming ;

Li, Aizhen .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (10) :H273-H275

[35] Hydride vapour phase epitaxy of GaN on molecular-beam epitaxial GaN substrates [J].

Bel'kov, VV ;

Botnaryuk, VM ;

Fedorov, LM ;

Goncharuk, IN ;

Novikov, SV ;

Ulin, VP ;

Zhilyaev, YV ;

Cheng, TS ;

Jeffs, NJ ;

Foxon, CT ;

Katsavets, NI ;

Harrison, I .

JOURNAL OF CRYSTAL GROWTH, 1998, 187 (01) :29-34

[36] Growth of thick GaN layers by hydride vapor phase epitaxy [J].

Monemar, B ;

Paskova, T ;

Hemmingsson, C ;

Larsson, H ;

Paskov, PP ;

Ivanov, IG ;

Kasic, A .

JOURNAL OF CERAMIC PROCESSING RESEARCH, 2005, 6 (02) :153-162

[37] Si Doping of GaN in Hydride Vapor-Phase Epitaxy [J].

Richter, E. ;

Stoica, T. ;

Zeimer, U. ;

Netzel, C. ;

Weyers, M. ;

Traenkle, G. .

JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (05) :820-825

[38] Hydride vapor phase epitaxy reactor for bulk GaN growth [J].

Voronenkov, Vladislav ;

Bochkareva, Natalia ;

Gorbunov, Ruslan ;

Zubrilov, Andrey ;

Kogotkov, Viktor ;

Latyshev, Philippe ;

Lelikov, Yuri ;

Leonidov, Andrey ;

Shreter, Yuri .

2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,

[39] Extended defects and polarity of hydride vapor phase epitaxy GaN [J].

Jasinski, J ;

Liliental-Weber, Z .

JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (05) :429-436

[40] Growth and doping of bulk GaN by hydride vapor phase epitaxy [J].

张育民 ;

王建峰 ;

蔡德敏 ;

任国强 ;

徐俞 ;

王明月 ;

胡晓剑 ;

徐科 .

Chinese Physics B, 2020, (02) :44-57

← 1 2 3 4 5 →