Electrical transport in GaN nanowires grown by selective epitaxy

被引：21

作者：

Talin, A. Alec ^{[1
]}

Swartzentruber, B. S. ^{[2
]}

Leonard, Francois ^{[1
]}

Wang, X. ^{[3
]}

Hersee, Stephen D. ^{[3
]}

机构：

[1] Sandia Natl Labs, Livermore, CA 94550 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Univ New Mexico, Albuquerque, NM 87545 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 04期

基金：

美国能源部;

关键词：

carrier density; electron mobility; epitaxial growth; gallium compounds; III-V semiconductors; nanofabrication; nanowires; ohmic contacts; p-n junctions; sapphire; semiconductor growth; semiconductor quantum wires; space charge; wide band gap semiconductors; HETEROSTRUCTURES;

D O I：

10.1116/1.3123302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the electrical transport characteristics of undoped, n-doped, and pn-junction GaN nanowires grown by selective epitaxy on GaN/sapphire substrates. The selective epitaxy is realized by a combination of a patterned Si(3)N(4) mask, which defines the position and diameter of the nanowires, and appropriate growth conditions, which lead to a near one-dimensional growth along the c-direction. They find that the electrical transport in nominally undoped nanowires is dominated by space charge limited conduction, and using a new theory for space charge limited conduction, they extract an electron mobility of similar to 400 cm(2)/V s and a free carrier concentration of similar to 10(15)-10(16) cm(-3). By controlling the nanowire doping, they observe Ohmic transport for n-doped nanowires and rectifying characteristics for pn-junction nanowires.

引用

页码：2040 / 2043

页数：4

共 14 条

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