true random number generator;
memristor;
entropy;
multivibrator;
oscillator;
OSCILLATOR;
D O I:
10.3390/e23030371
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
In this work, we build and test three memristor-based true random number generator (TRNG) circuits: two previously presented in the literature and one which is our own design. The functionality of each circuit is assessed using the National Institute of Standards and Technology (NIST) Statistical Test Suite (STS). The TRNG circuits were built using commercially available off-the-shelf parts, including the memristor. The results of this work confirm the usefulness of memristors for successful implementation of TRNG circuits, as well as the ease with which a TRNG can be built using simple circuit designs and off-the-shelf breadboard circuit components.
机构:
Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
Hanyang Univ, Dept Semicond Engn, Seoul 04763, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
Yu, Dayeon
Ahn, Suhyeon
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机构:
Inha Univ, Dept Elect & Comp Engn, Incheon 22212, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
Ahn, Suhyeon
Youn, Sangwook
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机构:
Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
Hanyang Univ, Dept Semicond Engn, Seoul 04763, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
Youn, Sangwook
Park, Jinwoo
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机构:
Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
Hanyang Univ, Dept Semicond Engn, Seoul 04763, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
Park, Jinwoo
Kim, Hyungjin
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机构:
Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
Hanyang Univ, Dept Semicond Engn, Seoul 04763, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea