Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films

被引:10
|
作者
Samarelli, A. [1 ]
Frigerio, J. [2 ]
Sakat, E. [3 ]
Baldassarre, L. [4 ]
Gallacher, K. [1 ]
Finazzi, M. [3 ]
Isella, G. [2 ]
Ortolani, M. [5 ]
Biagioni, P. [3 ]
Paul, D. J. [1 ]
机构
[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
[2] Politecn Milan, L NESS, Como, Italy
[3] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy
[4] Ist Italiano Tecnol, Ctr Life NanoSci Sapienza, Rome, Italy
[5] Univ Roma La Sapienza, Dept Phys, Rome, Italy
关键词
Semiconductors; Germanium; Plasmonic; Mid-infrared; Electron beam; Etching; Antenna; Resonance; ENERGY; PHOTONICS; SILICON;
D O I
10.1016/j.tsf.2015.10.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, the growth and the fabrication of heavily doped germanium plasmonic antennas for mid-infrared applications are reported. By tuning the phosphorus doping concentration and the antenna geometrical parameters, plasma frequencies for targeting the 8-15 mu m spectral region are achieved. 1 mu m thick, heavily doped (2.3 x 10(19) cm(-3)) germanium was used to fabricate dipole antennas of 800 nm width with a gap spacing of 300 nm which demonstrate resonance frequencies around 13 mu m and 13.5 mu m for 2 mu m and 3 mu m long structures, respectively. This technology has the potential to be used for mid-infrared sensing applications of hazardous gases and liquids. Crown Copyright (C) 2015 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:52 / 55
页数:4
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