Improved SPICE Macromodel of Phase Change Random Access Memory

被引：5

作者：

Chang, Huan-Lin ^{[1
,2
]}

Chang, Hung-Chih ^{[1
,2
]}

Yang, Shang-Chi ^{[1
,2
]}

Tsai, Hsi-Chun ^{[1
,2
]}

Li, Hsuan-Chih ^{[1
,2
]}

Liu, C. W. ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

来源：

2009 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PROGRAM | 2009年

关键词：

HSPICE MACROMODEL; MODEL;

D O I：

10.1109/VDAT.2009.5158113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an improved SPICE macromodel of phase change random access memory (PCRAM). Based on the circuit-based model architecture in [1], the novelty of this work lies in (1) accurate modeling the current-voltage (I-P) plot including the snap-back phenomenon, and (2) solution to the falling edge problem to avoid misrepresentation of the PCRAM state, and (3) calibration of the crystallization time for potential multilevel (ML) operation of the PCRAM.

引用

页码：134 / +

页数：2

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