Current drive in n- type Schottky Barrier MOSFETs: a Monte Carlo study

被引：1

作者：

Pascual, Elena ^{[1
]}

Rengel, Raul ^{[1
]}

Martin, Maria J. ^{[1
]}

机构：

[1] Univ Salamanca, Dept Appl Phys, Plaza Merced S-N, E-37008 Salamanca, Spain

来源：

PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES | 2009年

关键词：

SIMULATION; CONTACT; MODEL;

D O I：

10.1109/SCED.2009.4800442

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a Monte Carlo study of the static performance of Schottky barrier (SB) SOI MOSFETs. A 2D Ensemble Monte Carlo (EMC) simulator including tunnelling transport at the Schottky interfaces has been used. Quantum transmission coefficients and treatment of image charge effects on the Schottky barrier have been carefully considered. The physical principles of operation of SB-MOSFETs have been studied as well as the transition of the device from triode to saturation regime by means of the study of the internal quantities provided by the our simulator, such as the potential, carrier density and average carrier velocity.

引用

页码：108 / +

页数：2

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