Effects of temperature and carrier gas flow amount on the formation of GaN nanorods by the HVPE method

被引：19

作者：

Kwon, H. Y. ^{[1
]}

Shin, M. J. ^{[1
]}

Choi, Y. J. ^{[1
]}

Moon, J. Y. ^{[1
]}

Ahn, H. S. ^{[1
]}

Yi, S. N. ^{[1
]}

Kim, S. ^{[2
]}

Ha, D. H. ^{[2
]}

Park, S. H. ^{[3
]}

机构：

[1] Korea Maritime Univ, Dept Appl Sci, Pusan 606791, South Korea

[2] Korea Res Inst Stand & Sci, Adv Technol Div, Taejon 305, South Korea

[3] Catholic Univ Deagu, Dept Elect Engn, Hayang 702701, Kyeongbuk, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 16期

关键词：

Low dimensional structures; Nanostructures; Hydride vapor phase epitaxy; Semiconducting III-V materials; MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; OPTICAL CHARACTERIZATION; SI(111); GROWTH; SUBSTRATE; FILMS;

D O I：

10.1016/j.jcrysgro.2009.07.002

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We fabricated one-dimensional GaN nanorods on AlN/Si (1 1 1) substrates at various temperatures, and carrier gas flow amount, using the hydride vapor phase epitaxy (HVPE) method. An AlN buffer layer of 50 nm thickness was deposited by RF sputtering for 25 min. Stalagmite-like GaN nanorods formed at a growth temperature of 650 degrees C. The diameters and lengths of GaN nanorods increase with growth time, whereas the density of nanorods decreases. And we performed the experiments by changing the carrier gas flow amount at a growth temperature of 650 degrees C and HCl:NH3 flow ratio of 1:40. GaN nanorods, with an average diameter of 50 nm, were obtained at a carrier gas flow amount of 1340 sccm. The shape, structures, and optical characteristics of the nanorods were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4146 / 4151

页数：6

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