Electric-field control of spin-orbit torque in a magnetically doped topological insulator

被引：0

作者：

Fan, Yabin ^{[1
]}

Kou, Xufeng ^{[1
]}

Upadhyaya, Pramey ^{[1
]}

Shao, Qiming ^{[1
]}

Pan, Lei ^{[1
]}

Lang, Murong ^{[1
]}

Che, Xiaoyu ^{[1
]}

Tang, Jianshi ^{[1
]}

Montazeri, Mohammad ^{[1
]}

Murata, Koichi ^{[1
]}

Chang, Li-Te ^{[1
]}

Akyol, Mustafa ^{[1
]}

Yu, Guoqiang ^{[1
]}

Nie, Tianxiao ^{[1
]}

Wong, Kin L. ^{[1
]}

Liu, Jun ^{[2
,3
]}

Wang, Yong ^{[2
,3
]}

Tserkovnyak, Yaroslav ^{[4
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Zhejiang Univ, Sch Mat Sci & Engn, Ctr Electron Microscopy, Hangzhou 310027, Zhejiang, Peoples R China

[3] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[4] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA

来源：

NATURE NANOTECHNOLOGY | 2016年 / 11卷 / 04期

基金：

美国国家科学基金会;

关键词：

SURFACE-STATES; FERROMAGNETISM; POLARIZATION; BI2SE3; FILMS;

D O I：

10.1038/NNANO.2015.294

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.

引用

页码：352 / 359

页数：8

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