A Method for Improving Resolution and Critical Dimension Measurement of an Organic Layer Using Deep Learning Superresolution

被引:1
作者
Kim, Sangyun [1 ,2 ]
Pahk, Heui Jae [1 ]
机构
[1] Seoul Natl Univ, Sch Mech & Aerosp Engn, Seoul 08826, South Korea
[2] SNUPrecis Co Ltd, Asan 31409, South Korea
关键词
Critical dimension measurement; Edge detection; Deep learning superresolution; IMAGE; PATTERN;
D O I
10.3807/COPP.2018.2.2.153
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In semiconductor manufacturing, critical dimensions indicate the features of patterns formed by the semiconductor process. The purpose of measuring critical dimensions is to confirm whether patterns are made as intended. The deposition process for an organic light emitting diode (OLED) forms a luminous organic layer on the thin-film transistor electrode. The position of this organic layer greatly affects the luminescent performance of an OLED. Thus, a system for measuring the position of the organic layer from outside of the vacuum chamber in real-time is desired for monitoring the deposition process. Typically, imaging from large stand-off distances results in low spatial resolution because of diffraction blur, and it is difficult to attain an adequate industrial-level measurement. The proposed method offers a new superresolution single-image using a conversion formula between two different optical systems obtained by a deep learning technique. This formula converts an image measured at long distance and with low-resolution optics into one image as if it were measured with high-resolution optics. The performance of this method is evaluated with various samples in terms of spatial resolution and measurement performance.
引用
收藏
页码:153 / 164
页数:12
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