A Lateral ZnO Nanowire Photodetector Prepared on Glass Substrate

被引：61

作者：

Weng, W. Y. ^{[1
,2
,3
]}

Chang, S. J. ^{[1
,2
,3
]}

Hsu, C. L. ^{[4
]}

Hsueh, T. J. ^{[5
]}

Chang, S. P. ^{[1
,2
,3
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[4] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[5] Natl Nano Device Labs, Tainan 741, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 02期

关键词：

II-VI semiconductors; nanofabrication; nanowires; photodetectors; semiconductor growth; semiconductor quantum wires; ultraviolet detectors; wide band gap semiconductors; zinc compounds; CHEMICAL-VAPOR-DEPOSITION; GA/GLASS TEMPLATES; NANORODS; GROWTH; EVAPORATION;

D O I：

10.1149/1.3264650

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the fabrication of a lateral ZnO nanowire UV photodetector on a glass substrate using tungsten as the growth barrier to suppress the vertical growth of the ZnO nanowires. Upon UV illumination, the detector current increased by more than 1 order of magnitude. Furthermore, the noise equivalent power and the normalized detectivity D(*) of the fabricated lateral ZnO nanowire photodetector were 7.89x10(-11) W and 1.9x10(8) cm Hz(0.5) W(-1), respectively.

引用

页码：K30 / K33

页数：4

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