Optical identification of impurity levels in strongly phosphorus-doped wide-gap II-VI bulk semimagnetic semiconductors

被引：0
|
作者：
Van Khoi, L [1 ]
Kossut, J [1 ]
Galazka, RR [1 ]
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 235卷 / 01期
关键词：
D O I：
10.1002/pssb.200301523
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Zn1-xMnxTe and Cd1-xMnxTe crystals doped with phosphorus have been investigated by means of the measurement of Hall effect, photoluminescence and reflectance. By annealing under high pressure of nitrogen (up to 4 MPa) at T = 800 degreesC for a week, a free hole density as high as 5 x 10(18) cm(-3) was achieved in Zn0.95Mn0.05Te, while in Cd0.99Mn0.01Te it was only 8 x 10(18) cm(-3). The phosphorus acceptor binding energy in Zn0.975Mn0.025Te and Cd0.99Mn0.01Te was found to be (0.036 +/- 0.002) eV and (0.054 +/- 0.002) eV, respectively.
引用
收藏
页码：44 / 47
页数：4
相关论文
共 50 条
  • [41] Competition of Deep and Shallow Impurities in Wide-Gap II-VI Compounds under Pressure
    Weinstein, B. A.
    Ritter, T. M.
    Strachan, D.
    Li, M.
    Physica Status Solidi (B): Basic Research, 198 (01):
  • [42] FABRICATION AND SPECTROSCOPY OF DRY-ETCHED WIDE-GAP II-VI SEMICONDUCTOR NANOSTRUCTURES
    TORRES, CMS
    SMART, AP
    FOAD, MA
    WILKINSON, CDV
    FESTKORPERPROBLEME - ADVANCES IN SOLID STATE PHYSICS 32, 1992, 32 : 265 - 277
  • [43] Barrier structures produced by CW laser irradiation of wide-gap II-VI materials
    Shkumbatyuk, PS
    INORGANIC MATERIALS, 1999, 35 (09) : 884 - 886
  • [44] EXCITATION AND TRANSMISSION SPECTROSCOPY OF BOUND EXCITON COMPLEXES IN WIDE-GAP II-VI SEMICONDUCTORS UNDER HIGH-EXCITATION DENSITIES
    GUTOWSKI, J
    HONIG, T
    PRESSER, N
    BROSER, I
    JOURNAL OF LUMINESCENCE, 1988, 40-1 : 433 - 434
  • [45] Optical Signatures of Impurity-Impurity Interactions in Copper Containing II-VI Alloy Semiconductors
    Bhattacharyya, Biswajit
    Gahlot, Kushagra
    Viswanatha, Ranjani
    Pandey, Anshu
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2018, 9 (03): : 635 - 640
  • [46] TRANSITION-METAL IMPURITIES AND BAND OFFSETS IN WIDE-GAP II-VI SEMICONDUCTORS - ZN1-XMNXSENI) COMPOUNDS
    GALAKHOV, VR
    SURKOVA, TP
    SOKOLOVA, VI
    KURMAEV, EZ
    ZUBRAGEL, C
    UNLU, H
    NEUMANN, M
    PERMOGOROV, SA
    TENISHEV, LN
    SOLID STATE COMMUNICATIONS, 1994, 91 (04) : 279 - 282
  • [47] Luminescence of doped nanoparticles of wide band gap II-VI compounds
    Godlewski, M.
    Yatsunenko, S.
    Zalewska, M.
    Klonkowski, A.
    Strachowski, T.
    Lojkowski, W.
    DOPED NANOPOWDERS: SYNTHESIS, CHARACTERISATION APPLICATIONS, 2007, 128 : 123 - +
  • [48] Dark exciton states and magneto-excitons in wide-gap II-VI quantum wells
    Puls, J
    Henneberger, F
    Rabe, M
    Siarkos, A
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 787 - 794
  • [49] OPTICALLY BISTABLE THIN-FILM DEVICES USING WIDE-GAP II-VI COMPOUNDS
    EICHLER, HJ
    GLAW, V
    KUMMROW, A
    PENSCHKE, V
    WAHI, A
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 695 - 698
  • [50] Exciton versus free-carrier lasing in wide-gap II-VI quantum wells
    Cingolani, R
    Coli, G
    Calcagnile, L
    Vanzetti, L
    Sorba, L
    Franciosi, A
    LaRocca, GC
    Campi, D
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 141 - 146
12345