Optical identification of impurity levels in strongly phosphorus-doped wide-gap II-VI bulk semimagnetic semiconductors

被引：0
|
作者：
Van Khoi, L [1 ]
Kossut, J [1 ]
Galazka, RR [1 ]
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 235卷 / 01期
关键词：
D O I：
10.1002/pssb.200301523
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Zn1-xMnxTe and Cd1-xMnxTe crystals doped with phosphorus have been investigated by means of the measurement of Hall effect, photoluminescence and reflectance. By annealing under high pressure of nitrogen (up to 4 MPa) at T = 800 degreesC for a week, a free hole density as high as 5 x 10(18) cm(-3) was achieved in Zn0.95Mn0.05Te, while in Cd0.99Mn0.01Te it was only 8 x 10(18) cm(-3). The phosphorus acceptor binding energy in Zn0.975Mn0.025Te and Cd0.99Mn0.01Te was found to be (0.036 +/- 0.002) eV and (0.054 +/- 0.002) eV, respectively.
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页码：44 / 47
页数：4
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