Optical identification of impurity levels in strongly phosphorus-doped wide-gap II-VI bulk semimagnetic semiconductors

被引：0

作者：

Van Khoi, L ^{[1
]}

Kossut, J ^{[1
]}

Galazka, RR ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 235卷 / 01期

关键词：

D O I：

10.1002/pssb.200301523

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zn1-xMnxTe and Cd1-xMnxTe crystals doped with phosphorus have been investigated by means of the measurement of Hall effect, photoluminescence and reflectance. By annealing under high pressure of nitrogen (up to 4 MPa) at T = 800 degreesC for a week, a free hole density as high as 5 x 10(18) cm(-3) was achieved in Zn0.95Mn0.05Te, while in Cd0.99Mn0.01Te it was only 8 x 10(18) cm(-3). The phosphorus acceptor binding energy in Zn0.975Mn0.025Te and Cd0.99Mn0.01Te was found to be (0.036 +/- 0.002) eV and (0.054 +/- 0.002) eV, respectively.

引用

页码：44 / 47

页数：4

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