Compliance current and film thickness influence upon multi-level threshold resistive switching of amorphous BaTiO3 (am-BTO) films in Ag/am-BTO/Ag cross point structures

被引：10
作者：
Razi, P. Muhammed [1 ]
Gangineni, R. B. [1 ]
机构：
[1] Pondicherry Univ, Sch Phys Chem & Appl Sci, Dept Phys, Kalapet 605014, Puducherry, India
来源：
THIN SOLID FILMS | 2019年 / 685卷
关键词：
Multi-level resistive switching; Amorphous thin films; Threshold Resistive switching; Cross-point structures; Oxygen vacancy migration; Selector devices; NONVOLATILE MEMORY; TRANSITION; MECHANISM; BEHAVIOR;
D O I：
10.1016/j.tsf.2019.05.061
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of compliance current and film thickness upon mull-level threshold resistive switching characteristics of amorphous BaTiO3 (am-BTO) thin films in Ag/am-BTO/Ag cross point structures have been investigated. The cross-point junctions are fabricated utilizing RF/DC magnetron sputtering technique and the thickness of am-BTO films are tuned with the sputtering time. The structural and microstructural details are probed with X-ray diffraction, Atomic force microscopy, Field effect scanning electron microscopy and X-ray photoelectron spectroscopy techniques. The current-voltage characteristics revealed a stable threshold resistive switching with maximum I-ON/I-OFF ratios of similar to 2 x 10(3) with low-threshold voltages and near zero voltage hold values are noted for 142 nm am-BTO thin film at 1 x 10(-4) A compliance current. The compliance current found to affect the bi-stability or mull-level resistance switching. The contribution of oxygen vacancies to the switching is elucidated from X-ray photoelectron spectroscopy measurements. Furthermore, the thickness effect on threshold resistive switching properties along with conduction mechanisms in lower and higher resistance states are discussed.
引用
收藏
页码：59 / 65
页数：7
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