Photoelectron diffraction for the sulfur interlayer between CaF2 epitaxial layers and sulfur-passivated InP(100)

被引:10
作者
Omori, S
Ishii, H
Nihei, Y
机构
[1] Institute of Industrial Science, University of Tokyo, Tokyo 106, Roppongi, Minato-ku
关键词
photoelectron diffraction; sulfur-passivation; epitaxy; indium phosphide; halides; semiconductor-insulator interfaces;
D O I
10.1016/S0169-4332(97)00297-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report here the structural analysis with X-ray photoelectron diffraction (XPED) on the interface between CaF2 epitaxial layers and a sulfur-passivated InP(100) surface. Multiple-scattering cluster calculations with spherical-wave scattering (MSC-SW) give a good description of the XPED from both the InP(100) substrate and the CaF2 overlayer and show that CaF2 grows epitaxially on the substrate as CaF2(100) islands even at the initial stages of epitaxy. On the other hand, forward scattering peaks are observed in angular distributions of S2p intensities, which indicate the directions of the interatomic axes between S and Ca and/or F at the interface. We determined the possible stacking of CaF2 layers on the S interlayer from these results and MSC calculations. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:241 / 244
页数:4
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