Deep levels analysis in wavelength extended InGaAsBi photodetector

被引：7

作者：

Huang, Jian ^{[1
]}

Chen, Baile ^{[1
]}

Deng, Zhuo ^{[1
]}

Gu, Yi ^{[2
,3
]}

Ma, Yingjie ^{[2
,3
]}

Zhang, Jian ^{[2
]}

Chen, Xiren ^{[4
]}

Shao, Jun ^{[4
]}

机构：

[1] Shanghai Tech Univ, Sch Informat Sci & Technol, Optoelect Device Lab, Shanghai 201210, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Transducer Technol, Shanghai 200083, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 09期

基金：

中国国家自然科学基金;

关键词：

InGaAsBi; photodetector; deep level analysis; low frequency noise; photoluminescence; QUANTUM-WELL; PHOTOLUMINESCENCE; SPECTROSCOPY; PHOTODIODE; LAYER;

D O I：

10.1088/1361-6641/ab3539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP based dilute bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects within the material. In this work, low frequency noise spectroscopy (LFNS) and temperature varied photoluminescence was used to characterize the defect levels in the devices. Three deep levels located at E-c - 0.33 eV, E-v + 0.14 eV, and E-c - 0.51 eV were identified from the LFNS spectra, which are consistent with emission peak energy found by photoluminescence spectra of InGaAsBi.

引用

页数：7

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