Conduction mechanisms of P3HT:PCBM solar cell

被引：1
|
作者：
Nolasco, Jairo C. [1 ]
Cabre, R. [1 ]
Pacios, Roberto [2 ]
Waldauf, Christoph [2 ]
Neophytou, Marios [2 ]
Palomares, Emilio [3 ]
Marsal, L. F. [1 ]
Pallares, J. [1 ]
机构：
[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Av Paisos Catalans 26, Tarragona 43007, Spain
[2] IKERLAN IK4 S Coop, Dept Microsyst, Arrasate Mondragon 20500, Gipuzkoa, Spain
[3] Ins Chem Res Catalonia ICIQ, E-43007 Tarragona, Spain
来源：
PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES | 2009年
关键词：
CRYSTALLINE SILICON HETEROJUNCTIONS; DIODES; MOBILITY; MODEL; SI;
D O I：
10.1109/SCED.2009.4800517
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to get a deeper understanding of the conduction mechanisms limiting the electrical characteristics of ITO/PEDOT:PSS/P3HT:PCBM/Al solar cells, dark current-voltage measurements at different temperatures were analyzed using a compact electrical equivalent circuit previously used in p/n junctions. Between 0.2 V and 0.6 V, the current-voltage characteristic is modeled by an exponential term which can be described by Multi-Tunneling Capture Emission process. For larger voltage, the model takes into account Space-Charge Limited process and series resistance. In addition, the model is useful to calculate the built in potential of the solar cell using only dark current-voltage-temperature measurements.
引用
收藏
页码：398 / +
页数：2
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