Effect of sulfurization process on the properties of solution-processed Cu2SnS3 thin film solar cells

被引：6

作者：

Zhao, Yun ^{[1
,2
]}

Han, Xiuxun ^{[3
]}

Xu, Bin ^{[1
]}

Dong, Chen ^{[1
,2
]}

Li, Junshuai ^{[4
,5
]}

Yan, Xingbin ^{[1
]}

机构：

[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Gansu, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100039, Peoples R China

[3] Jiangxi Univ Sci & Technol, Inst Engn Res, Ganzhou 341000, Peoples R China

[4] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China

[5] Lanzhou Univ, Minist Educ, Key Lab Special Funct Mat & Struct Design, Lanzhou 730000, Gansu, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 19期

基金：

中国国家自然科学基金; 中国科学院西部之光基金;

关键词：

FABRICATION; DEPOSITION;

D O I：

10.1007/s10854-019-02148-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu2SnS3 (CTS) based thin film solar cells were successfully fabricated through a facile solution processes followed by a post-sulfurization treatment. The influence of sulfurization temperature and time on the structural, compositional, morphological, optical and also the electrical properties of the solar cells were systematically studied. The results showed that the CTS thin films sulfurized at 580 degrees C would be a void-free and densely packed absorber layer with the grain size to be microns, having the band gap of similar to 1.01 eV. Furthermore, the sulfurization time is the key factor to influence the electronic properties of CTS absorber layer, and thus resulting in the best device performance of PCE = 2.41% by 20 min sulfurization process.

引用

页码：17947 / 17955

页数：9

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