Numerical simulations of films formed by cluster/particle co-deposition in atmospheric-pressure chemical vapor deposition process using organic silicon vapors and ozone gas

In order to confirm the previously developed numerical simulation for film formation by cluster/particle co-deposition in the atmospheric-pressure chemical vapor deposition [Fujimoto et al.: J. Appl. Phys. 85 (1999) 4196], simulation results were compared with experimentally obtained growth rates and surface morphologies of films prepared from four organic silicon vapors [tetraethylorthosilicate (TEOS), triethoxysilane (TRIES), tetramethylorthosilicate (TMOS), and oclamethylcyclotetrasiloxane (OMCTS)] and ozone gas using a flow-type vertical tube reactor. For TEOS, TRIES and TMOS, the simulation results could explain reasonably experimentally determined film growth rate, particle deposition rate and surface morphology of film when natural convection did not occur in the reactor. However, the numerical simulation could not estimate film formation from OMCTS.