Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

被引：10

作者：

Arimoto, Keisuke ^{[1
]}

Watanabe, Masato ^{[1
]}

Yamanaka, Junji ^{[1
]}

Nakagawa, Kiyokazu ^{[1
]}

Sawano, Kentarou ^{[2
]}

Shiraki, Yasuhiro ^{[2
]}

Usami, Noritaka ^{[3
]}

Nakajima, Kazuo ^{[3
]}

机构：

[1] Univ Yamanashi, Ctr Crystal Sci & Technol, Yamanashi 4008511, Japan

[2] Tokyo City Univ, Res Ctr Silicon Nanosci, Adv Res Labs, Setagaya Ku, Tokyo 1580082, Japan

[3] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 10期

关键词：

Molecular beam epitaxy; SiGe; THREADING DISLOCATION DENSITIES; GAS-SOURCE MBE; SIGE/SI(110) HETEROSTRUCTURES; TEMPERATURE-DEPENDENCE; GEXSI1-X ALLOYS; BUFFER; LAYERS;

D O I：

10.1016/j.sse.2009.05.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the role of composition grading in the strain relaxation process of SiGe films grown on Si(1 1 0) substrates by gas-source molecular beam epitaxy (MBE). The crystalline morphologies of the samples with and without a compositionally step-graded buffer layer were investigated using X-ray diffraction (XRD), a scanning transmission electron microscope (STEM), and an atomic force microscope (AFM). The composition grading was found to suppress the nucleation of growth twins. It was found that the strain relaxation mechanism depended on the growth method of the SiGe layers. in addition, the evolution of the crystalline morphology during step-graded buffer growth was investigated in detail. The evolution of defects during the growth of the graded layers and its relevancy to the strain relaxation process were clarified. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1135 / 1143

页数：9

共 14 条

[1] Determination of lattice parameters of SiGe/Si(110) heterostructures [J].

Arimoto, K ;

Yamanaka, J ;

Nakagawa, K ;

Sawano, K ;

Shiraki, Y ;

Koh, S ;

Usami, N .

THIN SOLID FILMS, 2006, 508 (1-2) :132-135

[2] Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBE [J].

Arimoto, Keisuke ;

Yamanaka, Junji ;

Nakagawa, Kiyokazu ;

Sawano, Kentarou ;

Shiraki, Yasuhiro ;

Usami, Noritaka ;

Nakajima, Kazuo .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) :343-348

[3] Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer [J].

Arimoto, Keisuke ;

Watanabe, Masato ;

Yamanaka, Junji ;

Nakagawa, Kiyokazu ;

Sawano, Kentarou ;

Shiraki, Yasuhiro ;

Usami, Noritaka ;

Nakajima, Kazuo .

THIN SOLID FILMS, 2008, 517 (01) :235-238

[4] Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures [J].

Arimoto, Keisuke ;

Watanabe, Masato ;

Yamanaka, Junji ;

Nakagawa, Kiyokazu ;

Usami, Noritaka ;

Nakajima, Kazuo ;

Sawano, Kentarou ;

Shiraki, Yasuhiro .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (03) :819-824

[5] Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates [J].

Arimoto, Keisuke ;

Watanabe, Masato ;

Yamanaka, Junji ;

Nakagawa, Kiyokazu ;

Sawano, Kentarou ;

Shiraki, Yasuhiro ;

Usami, Noritaka ;

Nakajima, Kazuo .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (03) :809-813

[6] GROWTH AND CHARACTERIZATION OF SI1-XGEX AND GE EPILAYERS ON (100) SI [J].

BARIBEAU, JM ;

JACKMAN, TE ;

HOUGHTON, DC ;

MAIGNE, P ;

DENHOFF, MW .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (12) :5738-5746

[7] Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping [J].

Elfving, A. ;

Zhao, M. ;

Hansson, G. V. ;

Ni, W. -X. .

APPLIED PHYSICS LETTERS, 2006, 89 (18)

[8] TOTALLY RELAXED GEXSI1-X LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON SI SUBSTRATES [J].

FITZGERALD, EA ;

XIE, YH ;

GREEN, ML ;

BRASEN, D ;

KORTAN, AR ;

MICHEL, J ;

MII, YJ ;

WEIR, BE .

APPLIED PHYSICS LETTERS, 1991, 59 (07) :811-813

[9] QUANTITATIVE-ANALYSIS OF STRAIN RELAXATION IN GEXSI1-X/SI(110) HETEROSTRUCTURES AND AN ACCURATE DETERMINATION OF STACKING-FAULT ENERGY IN GEXSI1-X ALLOYS [J].

HULL, R ;

BEAN, JC ;

PETICOLAS, LJ ;

BAHNCK, D ;

WEIR, BE ;

FELDMAN, LC .

APPLIED PHYSICS LETTERS, 1992, 61 (23) :2802-2804

[10] GROWTH OF GEXSI1-X ALLOYS ON SI(110) SURFACES [J].

HULL, R ;

BEAN, JC ;

PETICOLAS, L ;

BAHNCK, D .

APPLIED PHYSICS LETTERS, 1991, 59 (08) :964-966

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