Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

被引：49

作者：

Coss, B. E. ^{[1
,2
]}

Loh, W. -Y. ^{[1
]}

Wallace, R. M. ^{[2
]}

Kim, J. ^{[2
]}

Majhi, P. ^{[1
]}

Jammy, R. ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

[2] Univ Texas Dallas, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 22期

关键词：

conduction bands; contact resistance; high-k dielectric thin films; Schottky barriers; semiconductor-metal boundaries; silicon compounds; valence bands; work function; RESISTANCE;

D O I：

10.1063/1.3263719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky barrier height tuning using high-kappa/SiO2 interfacial dipoles is reported. Schottky barrier heights of 1.0 and 0.2 eV are observed in a TaN/p-Si diode by insertion of thin layers of high-kappa (LaOx,AlOx) and SiO2 at the metal-semiconductor interface. The dipole tunes the effective work function of TaN/p-Si by more than 0.8 eV to achieve effective Schottky barrier heights near conduction and valence band edge. LaOx (n-type) and AlOx (p-type) have a dipole potential offsets estimated to be 0.3 and 0.5 V, respectively. Applications to lowering contact resistivity are discussed, as well as a comparison of other dipole offsets.

引用

页数：3

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