Mean-field theory of quantum dot formation

被引：134
作者：
Dobbs, HT
Vvedensky, DD
Zangwill, A
Johansson, J
Carlsson, N
Seifert, W
机构：
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
[2] GEORGIA INST TECHNOL,SCH PHYS,ATLANTA,GA 30332
[3] LUND UNIV,S-22100 LUND,SWEDEN
来源：
PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 05期
关键词：
D O I：
10.1103/PhysRevLett.79.897
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The formation of undislocated three-dimensional (3D) islands during semiconductor heteroepitaxy is studied using self-consistent rate equations. Lattice misfit strain is presumed to influence the rate at which atoms detach from two-dimensional (2D) islands and the rate at which 2D islands transform to 3D islands. The calculated dependence of the 3D island densities on growth rate and coverage compares favorably with experimental results for InP grown on GaP-stabilized GaAs(001) by metal-organic vapor phase epitaxy.
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收藏
页码：897 / 900
页数：4
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