Tunable intrinsic spin Hall conductivity in bilayer PtTe2 by controlling the stacking mode

被引：26

作者：

Li, Jianwei ^{[1
]}

Jin, Hao ^{[1
]}

Wei, Yadong ^{[1
]}

Guo, Hong ^{[1
,2
,3
]}

机构：

[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China

[2] McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada

[3] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada

来源：

PHYSICAL REVIEW B | 2021年 / 103卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.103.125403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a systematic study on the intrinsic spin Hall conductivity (ISHC) of bilayer PtTe2 and explore the connection between the stacking order and ISHC. We find that by changing the stacking mode, ISHC can be manipulated from positive to negative values. Such strong stacking-dependent ISHC originates from the interlayer coupling, in which Te atoms in the upper and lower layers can form either van der Waals or covalentlike quasibonding depending on the stacking modes. Thus ISHC can be effectively tuned by changing the stacking order. These results not only allow us to establish fundamental understanding of ISHC in bilayer PtTe2 dependent on the stacking mode but also provide guidelines for the application of bilayer PtTe2 in next-generation spintronic devices.

引用

页数：7

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