Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers

被引：1
|
作者：
Nigam, S
Kim, J
Luo, B
Ren, F
Chung, GY
Pearton, SJ
Williams, JR
Shenai, K
Neudeck, P
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
[3] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA
[4] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[6] Sterling Semicond, Tampa, FL 33619 USA
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 01期
关键词：
D O I：
10.1016/S0038-1101(02)00272-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
P-i-n 4H-SiC rectifiers with SiO2 passivated mesa edge termination showed forward current characteristics dominated by recombination at low bias (n similar to 1.97) and diffusion at high voltages (n similar to 1.1). The forward turn-on voltage was similar to4 V, with a specific on-state resistance of 15 mOmega cm(2), on/off current ratio of 1.5 x 10(5) at 3 V/-450 V and figure-of-merit, V-B(2)/R-ON, of 13.5 MW cm(-2). The mesa extension distance did not have a strong impact on reverse breakdown voltage. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：61 / 64
页数：4
相关论文
共 50 条
  • [1] Termination optimization for 4H-SiC p-i-n diodes
    Boianceanu, C.
    Zekentes, K.
    Camara, N.
    Kayambaki, M.
    Rouet, W.
    2006 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, 2007, : 327 - +
  • [2] Large area, ultra-high voltage 4H-SiC p-i-n rectifiers
    Singh, R
    Irvine, KG
    Capell, DC
    Richmond, JT
    Berning, D
    Hefner, AR
    Palmour, JW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (12) : 2308 - 2316
  • [3] 4500 V planar implanted anode p-i-n junction rectifiers in 4H-SiC
    Fedison, J.B.
    Li, Z.
    Ramungul, N.
    Chow, T.P.
    Ghezzo, M.
    Kretchmer, J.
    Elasser, A.
    Annual Device Research Conference Digest, 1999, : 88 - 89
  • [4] Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques
    Zhang Fa-Sheng
    Li Xin-Ran
    CHINESE PHYSICS B, 2011, 20 (06)
  • [5] Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques
    张发生
    李欣然
    Chinese Physics B, 2011, (06) : 370 - 375
  • [6] Effect of contact geometry on 4H-SiC rectifiers with junction termination extension
    Nigam, S
    Kim, J
    Luo, B
    Ren, F
    Chung, GY
    Pearton, SJ
    Williams, JR
    Shenai, K
    Neudeck, P
    SOLID-STATE ELECTRONICS, 2003, 47 (01) : 57 - 60
  • [7] Electrical characteristics of 4.5 kV implanted anode 4H-SiC P-I-N junction rectifiers
    Fedison, JB
    Ramungul, N
    Chow, TP
    Ghezzo, M
    Kretchmer, JW
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (03) : 130 - 132
  • [8] Technology and characterization of 4H-SiC p-i-n junctions
    Kociubinski, Andrzej
    Duk, Mariusz
    Maslyk, Monika
    Kwietniewski, Norbert
    Sochacki, Mariusz
    Borecki, Michal
    Korwin-Pawlowski, Michael
    PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS 2013, 2013, 8903
  • [9] Current-Controlled Negative Resistance in High-Voltage 4H-SiC p-i-n Rectifiers
    Chowdhury, Sauvik
    Hitchcock, Collin W.
    Dahal, Rajendra P.
    Bhat, Ishwara B.
    Chow, T. Paul
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 897 - 900
  • [10] Microwave p-i-n diodes and switches based on 4H-SiC
    Zekentes, K.
    Camara, N.
    Romanov, L. P.
    Kirillov, A. V.
    Boltovets, M. S.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 999 - +
12345