Room temperature continuous wave quantum dot cascade laser emitting at 7.2 μm

被引：11

作者：

Zhuo, Ning ^{[1
,3
]}

Zhang, Jin-Chuan ^{[1
,3
]}

Wang, Feng-Jiao ^{[1
,2
,3
]}

Liu, Ying-Hui ^{[1
,2
,3
]}

Zhai, Shen-Qiang ^{[1
,3
]}

Zhao, Yue ^{[1
,2
,3
]}

Wang, Dong-Bo ^{[1
,2
,3
]}

Jia, Zhi-Wei ^{[1
,2
,3
]}

Zhou, Yu-Hong ^{[1
,2
,3
]}

Wang, Li-Jun ^{[1
,2
,3
]}

Liu, Jun-Qi ^{[1
,2
,3
]}

Liu, Shu-Man ^{[1
,2
,3
]}

Liu, Feng-Qi ^{[1
,2
,3
]}

Wang, Zhan-Guo ^{[1
,3
]}

Khurgin, Jacob B. ^{[4
]}

Sun, Greg ^{[5
]}

机构：

[1] Cliinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 10008, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing, Peoples R China

[3] Beijing Key Lab Low Dimens Semicond Mat & Devices, POB 912, Beijing 100083, Peoples R China

[4] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA

[5] Univ Massachusetts, Dept Engn, Boston, MA 02125 USA

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 12期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

SEMICONDUCTOR-LASER; ELECTROLUMINESCENCE; POWER;

D O I：

10.1364/OE.25.013807

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a quantum cascade laser with active regions consisting of InAs quantum dots deposited on GaAs buffer layers that arc embedded in InGaAs wells confined by InAlAs barriers. Continuous wave room temperature lasing at the wavelength of 7.2 mu m has been demonstrated with the threshold current density as low as 1.89 kA/cm(2), while in pulsed operational mode lasing at temperatures as high as 110 degrees C had been observed. A phenomenological theory explaining the improved performance due to weak localization of states had been formulated. (C) 2017 Optical Society of America

引用

页码：13807 / 13815

页数：9

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