Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

被引：11
|
作者：
Kuo, MC
Yang, CS
Tseng, PY
Lee, J
Shen, JL
Chou, WC [1 ]
Shih, YT
Ku, CT
Lee, MC
Chen, WK
机构：
[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
[2] Chung Yuan Christian Univ, Ctr Nano Technol, Chungli 32023, Taiwan
[3] Chien Kuo Inst Technol, Dept Elect Engn, Taichung, Taiwan
[4] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 242卷 / 3-4期
关键词：
atomic force microscopy; nanostructures'; molecular beam epitaxy; semiconducting II-VI materials;
D O I：
10.1016/S0022-0248(02)01421-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 10(8)/cm(2) and 10(9)/cm(2), respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：533 / 537
页数：5
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