Development of a phosphorus spray diffusion system for low-cost silicon solar cells

被引:23
作者
Kim, D. S. [1 ]
Hilali, M. M.
Rohatgi, A.
Nakano, K.
Hariharan, A.
Matthei, K.
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Univ Ctr Excellence Photovolta Res & Educ, Atlanta, GA 30332 USA
[2] GT Solar Technol, Merrimack, NH 03063 USA
关键词
D O I
10.1149/1.2202088
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Phosphoric acid was used an n-type doping source to make an emitter for silicon solar cells. This paper reports on a cold spray method to coat phosphoric acid on the silicon wafer without any additional complicated and corrosive heating system. The key spray parameters such as belt speed, flow rate of the carrier gas, and concentration of phosphoric acid are optimized to get uniform and reproducible sheet resistance for the emitter. The diffusion process has been studied by firing silicon wafers that are spray-coated with phosphoric acid. screen printed solar cells have been fabricated using the emitter formed by the spray coating. The effects of the emitter on cell performance have been investigated and compared with those of the conventional POCl3-diffused emitter. screen printed/spray- diffused cells give impressive cell efficiencies of similar to 16.6% on 1 Omega cm float zone wafers, which is nearly equal to those of POCl3 emitter cells (similar to 16.9% ). Compared with the POCl3 emitter cell, the spray-diffused cells show slightly lower quantum efficiency at the short-wavelength response and slightly higher emitter saturation current density (similar to 3.59 x 10(-13) A/cm(2)) compared with (2.73 x 10(-13) A/cm(2)). Further optimization can eliminate this small difference in efficiency.
引用
收藏
页码:A1391 / A1396
页数:6
相关论文
共 18 条
[1]   SIP PRECIPITATION WITHIN DOPED SILICON LATTICE, CONCOMITANT WITH PHOSPHORUS PREDEPOSITION [J].
ARMIGLIATO, A ;
NOBILI, D ;
SERVIDORI, M ;
SOLMI, S .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5489-5491
[2]  
BASORE PA, 1996, P 25 IEEE PHOT SPEC, P449
[3]  
BIRO D, 2004, P 19 EUR PHOT SOL EN, P528
[4]   Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films [J].
Bourdais, S ;
Beaucarne, G ;
Slaoui, A ;
Poortmans, J ;
Semmache, B ;
Dubois, C .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) :487-493
[5]   DEPOSITION AND REFLOW OF PHOSPHOSILICATE GLASS [J].
BOWLING, RA ;
LARRABEE, GB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :141-145
[6]  
CHOULAT P, 2001, P 17 EUR PHOT SOL EN, P1658
[7]  
CORBRIDGE DEC, 1980, PHOSPHORUS OUTLINE I, V2, P94
[8]   The effect of emitter recombination on the effective lifetime of silicon wafers [J].
Cuevas, A .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 57 (03) :277-290
[9]   18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation [J].
Doshi, P ;
Rohatgi, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) :1710-1716
[10]  
EBONG AU, 2002, P 20 EUR PHOT SOL EN, P1194