Rate equations for 1.3-μm dots-under-a-well and dots-in-a-well self-assembled InAs-GaAs quantum-dot lasers

被引：55

作者：

Tong, C. Z. ^{[1
]}

Yoon, S. F. ^{[1
]}

Ngo, C. Y. ^{[1
]}

Liu, C. Y. ^{[1
]}

Loke, W. K. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 11-12期

关键词：

quantum-dot (QD) laser; rate equations; semiconductor laser;

D O I：

10.1109/JQE.2006.883471

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A rate-equation model, in which three discrete quantum-dot (QD) energy levels are assumed and all possible relaxation paths and carrier transport in the GaAs barrier are considered, is presented to analyze the steady-state performance of 1.3 mu m undoped and doped dots-under-a-well (DUW) and dots-in-a-well (DWELL) InAs-GaAs QD lasers. DWELL QD lasers have higher saturation value of QD level occupation probabilities and characteristic temperature (To) than that of DUW QD lasers due to the improvement of hole confinement. The p-doped QD laser shows lower threshold current density than n-doped QD laser at the same threshold condition, and the To of n-doped DWELL laser is higher than that of p-doped DWELL laser at room temperature. Optimized QD layer number of DUW and DWELL QD lasers with different QD density is discussed.

引用

页码：1175 / 1183

页数：9

共 42 条

[1]

[Anonymous], 1995, PHYS OPTOELECTRONICS

[2] STRAIN EFFECTS AND BAND OFFSETS IN GAAS/INGAAS STRAINED LAYERED QUANTUM STRUCTURES [J].

ARENT, DJ ;

DENEFFE, K ;

VANHOOF, C ;

DEBOECK, J ;

BORGHS, G .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) :1739-1747

[3]

BEG TW, 2001, IEEE PHOTONIC TECH L, V13, P541

[4] Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots [J].

Boggess, TF ;

Zhang, L ;

Deppe, DG ;

Huffaker, DL ;

Cao, C .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :276-278

[5] Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature [J].

Borri, P ;

Schneider, S ;

Langbein, W ;

Woggon, U ;

Zhukov, AE ;

Ustinov, VM ;

Ledentsov, NN ;

Alferov, ZI ;

Ouyang, D ;

Bimberg, D .

APPLIED PHYSICS LETTERS, 2001, 79 (16) :2633-2635

[6] Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots [J].

Chang, WH ;

Hsu, TM ;

Huang, CC ;

Hsu, SL ;

Lai, CY ;

Yeh, NT ;

Nee, TE ;

Chyi, JI .

PHYSICAL REVIEW B, 2000, 62 (11) :6959-6962

[7]

CHOW WW, 1994, SEMICONDUCTOR LASER, DOI DOI 10.1007/978-3-642-61225-1

[8] Capture and thermal re-emission of carriers in long-wavelength InGaAs/GaAs quantum dots [J].

De Giorgi, M ;

Lingk, C ;

von Plessen, G ;

Feldmann, J ;

De Rinaldis, S ;

Passaseo, A ;

De Vittorio, M ;

Cingolani, R ;

Lomascolo, M .

APPLIED PHYSICS LETTERS, 2001, 79 (24) :3968-3970

[9] Quantum dimensionality, entropy, and the modulation response of quantum dot lasers [J].

Deppe, DG ;

Huffaker, DL .

APPLIED PHYSICS LETTERS, 2000, 77 (21) :3325-3327

[10] Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes [J].

Eliseev, PG ;

Li, H ;

Stintz, A ;

Liu, GT ;

Newell, TC ;

Malloy, KJ ;

Lester, LF .

APPLIED PHYSICS LETTERS, 2000, 77 (02) :262-264

← 1 2 3 4 5 →