Exciton-population inversion and terahertz gain in semiconductors excited to resonance

被引：46

作者：

Kira, M

Koch, SW

机构：

[1] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.93.076402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The buildup of exciton populations in resonantly laser excited semiconductors is studied microscopically. For excitation around the 2s-exciton resonance, it is shown that polarization with a strict s-type radial symmetry can be efficiently converted into an incoherent p-type population. As a consequence, inversion between the 2p and 1s exciton states can be obtained leading to the appearance of significant terahertz gain.

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页码：076402 / 1

页数：4

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