Low-pressure plasma sources for etching and deposition

被引：20

作者：

Cooke, MJ ^{[1
]}

Hassall, G ^{[1
]}

机构：

[1] Oxford Instruments Plasma Technol, Bristol BS49 4AP, Avon, England

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 2002年 / 11卷 / 3A期

关键词：

D O I：

10.1088/0963-0252/11/3A/311

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A variety of induction-coupled plasma source designs have been characterized for their ability to couple charged species to a lower electrode. Designs can be classified in a spectrum from remote sources, through plasma transport sources, to close-coupled sources. The DC self-bias on a lower electrode at constant bias power is used as a diagnostic of plasma coupling between source and lower electrode.

引用

页码：A74 / A79

页数：6

共 18 条

[1] WAVES AND MICROINSTABILITIES IN PLASMAS - LINEAR EFFECTS [J].

ALLEN, JE ;

PHELPS, ADR .

REPORTS ON PROGRESS IN PHYSICS, 1977, 40 (11) :1305-1368

[2] PLASMA-ETCHING IN MAGNETIC MULTIPOLE MICROWAVE-DISCHARGE [J].

ARNAL, Y ;

PELLETIER, J ;

POMOT, C ;

PETIT, B ;

DURANDET, A .

APPLIED PHYSICS LETTERS, 1984, 45 (02) :132-134

[3] APPLICATION OF A LOW-PRESSURE RADIO-FREQUENCY DISCHARGE SOURCE TO POLYSILICON GATE ETCHING [J].

COOK, JM ;

IBBOTSON, DE ;

FLAMM, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (01) :1-4

[4] Radial uniformity of an external-coil ionized physical vapor deposition source [J].

Dickson, M ;

Zhong, G ;

Hopwood, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02) :523-531

[5] Predictions of ion energy distributions and radical fluxes in radio frequency biased inductively coupled plasma etching reactors [J].

Hoekstra, RJ ;

Kushner, MJ .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2275-2286

[6] Review of inductively coupled plasmas for plasma processing [J].

Hopwood, J. .

PLASMA SOURCES SCIENCE & TECHNOLOGY, 1992, 1 (02) :109-116

[7]

JOHNSON WL, 1993, Patent No. 5234529

[8] A three-dimensional model for inductively coupled plasma etching reactors: Azimuthal symmetry, coil properties, and comparison to experiments [J].

Kushner, MJ ;

Collison, WZ ;

Grapperhaus, MJ ;

Holland, JP ;

Barnes, MS .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) :1337-1344

[9] Role of gas feed delivery and dilutent on oxide etching in an inductively coupled plasma etch system [J].

Lercel, MJ ;

Dang, D ;

Marmillion, N ;

Mlynko, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (03) :1459-1463

[10]

LIEBERMAN MA, 1994, PRINCIPLES PLASMA DI

← 1 2 →