New process of silicon carbide purification intended for silicon passivation

被引：10

作者：

Barbouche, M. ^{[1
,6
]}

Zaghouani, R. Benabderrahmane ^{[2
]}

Benammar, N. E. ^{[3
]}

Aglieri, V. ^{[4
]}

Mosca, M. ^{[4
]}

Macaluso, R. ^{[4
]}

Khirouni, K. ^{[5
]}

Ezzaouia, H. ^{[6
]}

机构：

[1] Res & Technol Ctr Energy, Laboratoty Nanomat & Syst Renewable Energy, Technopk Borj Cedria,BP 95, Hammamlif 2050, Tunisia

[2] Res & Technol Ctr Energy, Photovolta Lab, Technopk Borj Cedria,BP 95, Hammamlif 2050, Tunisia

[3] Natl Ctr Res Mat Sci, Lab Valuat Useful Mat, Tunis, Tunisia

[4] Univ Palermo, Thin Films Lab, Dipartimento Energia Ingn Informaz & Modelli Mat, Viale Sci, I-90128 Palermo, Italy

[5] Univ Gabes, Fac Gabes, Lab Phys Mat & Nanomat Appl Environm, Gabes 6079, Tunisia

[6] Res & Technol Ctr Energy, Lab Semicond Nanostruct & New Technol, Technopk Borj Cedria,BP 95, Hammamlif 2050, Tunisia

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 101卷

关键词：

Silicon carbide; Impurities; Gettering; ICP-AES; Minority carrier lifetime; Passivation; SURFACE PASSIVATION; POROUS SILICON; OPTICAL-CONSTANTS; GRADE SILICON; THIN; LAYER; POWDER; SILANE; FILMS; DEPOSITION;

D O I：

10.1016/j.spmi.2016.11.064

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purification intended to be used in photovoltaic applications. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment. The effect of etching time on impurities removal efficiency was studied. Inductively coupled plasma atomic emission spectrometry (ICP-AES) results showed that the best result was achieved for an etching time of 10 min followed by gettering at 900 degrees C during 1 h. SiC purity is improved from 3N (99.9771%) to 4N (99.9946%). Silicon carbide thin films were deposited onto silicon substrates by pulsed laser deposition technique (PLD) using purified SiC powder as target. Significant improvement of the minority carrier lifetime was obtained encouraging the use of SiC as a passivation layer for silicon. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：512 / 521

页数：10

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