Characterization of SiC Thin Films Deposited by HiPIMS

被引：4

作者：

Leal, Gabriela ^{[1
]}

Bastos Campos, Tiago Moreira ^{[1
]}

da Silva Sobrinho, Argemiro Soares ^{[1
]}

Pessoa, Rodrigo Savio ^{[2
]}

Maciel, Homero Santiago ^{[1
,2
]}

Massi, Marcos ^{[1
,3
]}

机构：

[1] Inst Tecnol Aeronaut ITA, Ctr Tecn Aeroespacial CTA, BR-12228900 Sao Jose Dos Campos, SP, Brazil

[2] Univ Vale Paraiba, UNIVAP, BR-12244390 Sao Jose Dos Campos, SP, Brazil

[3] Univ Fed Sao Paulo, UNIFESP, BR-12231280 Sao Jose Dos Campos, SP, Brazil

来源：

MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS | 2014年 / 17卷 / 02期

基金：

巴西圣保罗研究基金会;

关键词：

HiPIMS; thin film; silicon carbide; AMORPHOUS-SILICON CARBIDE; RAMAN-SCATTERING; TECHNOLOGY; CARBON;

D O I：

10.1590/S1516-14392014005000038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.

引用

页码：472 / 476

页数：5

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