A study of diode protection for giant magnetoresistive recording heads

被引:4
|
作者
Wallash, A [1 ]
Wang, WW [1 ]
机构
[1] Quantum Corp, Milpitas, CA 95035 USA
来源
ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 1999 | 1999年
关键词
D O I
10.1109/EOSESD.1999.819088
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
ESD testing of giant magnetoresistive (GMR) heads with diodes is described. While the use of diodes did increase the magnetic and failure voltages of the GMR head, the magnetic failure voltage was increased much less than the resistance failure voltage. This results in an unfortunate side effect, which is to dramatically increase in the range over which magnetic damage occurs without a resistance change. This problem was especially clear for the case of two diodes in series. The current flow through the GMR head and diode were: measured and agreed with SPICE circuit simulation results. The difference between magnetic and resistance protection is due to the nonlinear clamping behavior of the diode. It is concluded that serious magnetic damage will be the predominant failure signature for GMR heads with ESD protect diodes.
引用
收藏
页码:385 / 390
页数:6
相关论文
共 50 条