Electrical properties of high-k ZrO2 gate dielectrics on strained Ge-rich layers

被引：0

作者：

Bhattacharya, S ^{[1
]}

McCarthy, J ^{[1
]}

Armstrong, BM ^{[1
]}

Gamble, HS ^{[1
]}

Dalapati, GK ^{[1
]}

Das, S ^{[1
]}

Chakraborty, S ^{[1
]}

Maiti, CK ^{[1
]}

Perova, TS ^{[1
]}

Moore, RA ^{[1
]}

机构：

[1] Queens Univ Belfast, Sch Elect & Elect Engn, Belfast, Antrim, North Ireland

来源：

2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of ultrathin high-k ZrO2 gate dielectric films deposited on strained Ge-rich layers using microwave plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature (150degreesC) have been studied. The strained Ge-rich heterolayers have been analyzed by transmission electron microscopy (TEM) and Raman spectra. X-ray photoelectron spectroscopy (XPS) has been used for analysis of chemical compositions of the deposited ZrO2 films. The fixed oxide charge density (Q(f)/q) and interface state density (D-it) are found to be 4.8 x 10(11) cm(-2) and 5.1 x 10(10) eV(-1) cm(-2), respectively. The capacitance-voltage (C-V) characteristics and current-voltage (I-V) characteristics before and after constant current stressing exhibit good electrical properties and thus indicate the suitability of these films for future microelectronic applications.

引用

页码：405 / 407

页数：3

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